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LCL2304-L - MCM LNA

LCL2304-L_4584278.PDF Datasheet


Part No.	LCL2304-L LCL1904-L
Description	MCM LNA
File Size	179.26K / 3 Page
Maker	RFHIC
Homepage	http://www.rfhic.com/
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Full text search : MCM LNA

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TQ3M31	832-894 MHz & 1930-1990 MHz Dual Band LNA From old datasheet system Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC	TRIQUINT[TriQuint Semiconductor] TriQuint Semiconductor,Inc.
79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2	4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40 4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40 4 Megabit EEPROM MCM 512K X 8 EEPROM 5V MODULE, 150 ns, DFP40 4 Megabit EEPROM MCM	Maxwell Technologies, Inc
89LV1632RPQK-30	16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM	Maxwell Technologies, Inc
89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16	16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位）立方米的SRAM	Maxwell Technologies, Inc
89C1632RPQK-30 89C1632 89C1632RPQE-20 89C1632RPQE-	16 Megabit (512K x 32-Bit) MCM SRAM	MAXWELL[Maxwell Technologies]
89LV1632RPQK-30 89LV1632 89LV1632RPQE-30 89LV1632R	16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM	MAXWELL[Maxwell Technologies]
5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59	512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).	Aeroflex Circuit Technology
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